[2025 OPEN ACCESS]
MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation
2025 Appl. Phys. Express 18 076501
iopscience.iop.org/article/10.3...
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#Physics
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#GaN
#HEMT
#AlN
#bandgap
#platform