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[OPEN ACCESS]
Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates
2025 Appl. Phys. Express 18 065503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlN
#quantum
#photo
#AlGaN
#ultraviolet
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[OPEN ACCESS]
Boost in internal quantum efficiency of AlGaN-based deep ultraviolet multiple quantum wells by using multifaceted localization structures
2025 Appl. Phys. Express 18 055501
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#Semipolar
#multifacet
#quantum
#carrier
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[2025 OPEN ACCESS]
Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer
2025 18 031003
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#Semiconductor
#LED
#UV
#Crystal
#growth
#Lifetime
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[Open Access]
A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation
2024 Jpn. J. Appl. Phys. 63 031005
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#AlGaN
#GaN
#HEMT
#gate
#breakdown
#voltage
#power
#dielectric
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[Open Access]
Impact of aluminum concentration variations on the performance of thin barrier enhancement-mode GaN MIS-HEMTs
2025 Jpn. J. Appl. Phys. 64 01SP18
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#AlGaN
#GaN
#HEMT
#ferroelectric
#thin
#barrier
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[2025 OPEN ACCESS]
2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates
2025 Appl. Phys. Express 18 016504
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#HEMT
#Ultrawide
#bandgap
#semiconductor
#transistor
#Power
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[SPOTLIGHTS : FREE ARTICLE]
Exfoliation mechanism of AlGaN-based thin films using heated-pressurized water
2023 Appl. Phys. Express 16 105504
iopscience.iop.org/article/10.3...
Spotlights
iopscience.iop.org/journal/1882...
#APEX
#Physics
#Spotlights
#Exfoliation
#AlGaN
#thinfilm
#crystallographic
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[OPEN ACCESS]
Fabrication of vertical AlGaN-based ultraviolet-B laser diodes using a laser lift-off method
2023 Appl. Phys. Express 16 104001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#ultraviolet
#vertical
#laser
#diode
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[OPEN ACCESS]
Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques
2023 16 091002
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#GaN
#heterostructure
#HEMT
#TLM
#XPS
#PEC
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[OPEN ACCESS]
Multi-active region AlGaN UV LEDs with transparent tunnel junctions
2023 Appl. Phys. Express 16 082001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#UV
#LED
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[Latest Article: Open Access]
Effect of threshold voltage variability on uniformity in FET-based terahertz focal-plane arrays
2025 Appl. Phys. Express 18 104001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#terahertz
#focal
#uniformity
#AlGaN
#GaN
#HEMT
#threshold
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[Latest Article: Open Access]
Recent progress on highly efficient and long-lifetime AlGaN-based light-emitting diodes
2025 Appl. Phys. Express 18 102001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#device
#lifetime
#ultraviolet
#AlGaN
#LED
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2208 Total downloads!
[OPEN ACCESS]
Al0.64Ga0.36N channel MOSHFET on single crystal bulk AlN substrate
2023 Appl. Phys. Express 16 061001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#MOSHFET
#crystal
#AlN
#substrate
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[SPOTLIGHTS : FREE ARTICLE]
Exfoliation mechanism of AlGaN-based thin films using heated-pressurized water
2023 Appl. Phys. Express 16 105504
iopscience.iop.org/article/10.3...
Spotlights
iopscience.iop.org/journal/1882...
#APEX
#Physics
#Spotlights
#Exfoliation
#AlGaN
#thinfilm
#crystallographic
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[OPEN ACCESS]
Fabrication of vertical AlGaN-based ultraviolet-B laser diodes using a laser lift-off method
2023 Appl. Phys. Express 16 104001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#ultraviolet
#vertical
#laser
#diode
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0
[OPEN ACCESS]
Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques
2023 16 091002
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#GaN
#heterostructure
#HEMT
#TLM
#XPS
#PEC
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[OPEN ACCESS]
Multi-active region AlGaN UV LEDs with transparent tunnel junctions
2023 Appl. Phys. Express 16 082001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#UV
#LED
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[OPEN ACCESS]
Al0.64Ga0.36N channel MOSHFET on single crystal bulk AlN substrate
2023 Appl. Phys. Express 16 061001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#AlGaN
#MOSHFET
#crystal
#AlN
#substrate
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