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OPEN ACCESS
Temperature dependence of barrier height in a Ni/β-Ga2O3 Schottky barrier diode precisely determined by the analysis based on the thermionic emission-diffusion model
2025 Appl. Phys. Express 18 074001

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#diode
#gallium
#oxide

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[2025 OPEN ACCESS]
Ultrashort gain-switched pulse trains from laser diodes characterized by a single-shot up-conversion time microscope
2025 Appl. Phys. Express 18 072002

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#switch
#laser
#diode
#spectroscopy
#pulse
#conversion

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[2024 OPEN ACCESS]
Franz–Keldysh effect in β-Ga2O3 Schottky barrier diode under high reverse bias voltage
2024 Appl. Phys. Express 17 124001

iopscience.iop.org/article/10.3...

#APEX
#Physics
#OpenAccess
#Ga2O3
#FranzKeldysh
#Photocurrent
#photoemission
#Schottky
#diode

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[Spotlights]
Demonstration of UV-A stimulated emission from optical pumping with a nano-porous cladding layer
2024 Appl. Phys. Express 17 122001

iopscience.iop.org/article/10.3...

Spotlights
iopscience.iop.org/journal/1882...

#APEX
#Physics
#OA
#オープンアクセス
#GaN
#Ultraviolet
#Diode
#Optical
#MOCVD

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[APEX REVIEW : Open Access]
Fundamentals and recent advances of terahertz resonant tunneling diodes
2024 17 070101
Safumi Suzuki, Masahiro Asada, Tokyo Institute of Technology

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#Review
#terahertz
#resonant
#tunneling
#diode

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[OPEN ACCESS]
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#rutile
#germanium
#dioxide
#Schottky
#diode
#powerdevice
#CVD

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[Spotlight 2024 : OPEN ACCESS]
High-current, high-voltage AlN Schottky barrier diodes
2024 Appl. Phys. Express 17 101002

iopscience.iop.org/article/10.3...

Spotlights
iopscience.iop.org/journal/1882...

#APEX
#Physics
#OpenAccess
#Spotlights
#AlN
#Schottky
#diode
#powerelectronics

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[2025 Open Access]
Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
2025 Appl. Phys. Express 18 036503

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#GaN
#powerdevice
#diode
#PEC
#etching
#contactless
#avalanche
#breakdown
#deep

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